Study of High Indium InXGa1-XN Alloys with Synchrotron Radiation
نویسندگان
چکیده
InGaN thin films with near entire indium composition range have been successfully grown on GaN/sapphire (0001) by molecular beam epitaxy (MBE). X-ray absorption fine structure have been used to study the local structure of some typical InxGa1-xN alloys with high indium (In) composition of x=0.78 and 0.86. A detailed analysis of the extended x-ray absorption fine structure of In K-edge by using the IFEFFIT program, and the chemical bonds of In-N are obtained. The x-ray absorption near-edge structure of In Kand L-edge and N K-edge are investigated, and the electronic structure of InxGa1-xN are determined with these high In content InxGa1-xN ternary compounds. The calculated XANES spectra of N K-edge, based on first principle method, are consistent with the observed spectra.
منابع مشابه
Microstructural Characterization of High Indium-Composition InXGa1−XN Epilayers Grown on c-Plane Sapphire Substrates
The growth of high-quality indium ~In!-rich InXGa1 XN alloys is technologically important for applications to attain highly efficient green light-emitting diodes and solar cells. However, phase separation and composition modulation in In-rich InXGa1 XN alloys are inevitable phenomena that degrade the crystal quality of In-rich InXGa1 XN layers. Composition modulations were observed in the In-ri...
متن کاملFirst-Principles Investigation of Density of States and Electron Density in Wurtzite In0.5Ga0.5 N Alloys with GGA-PBEsol Method
In present work, we have calculated the electronic properties including density of states and electron density for GaN, InN and InxGa1-xN in wurtzite phase for x=0.5. The study is based on density functional theory with full potential linearized augmented plane wave method by generalized gradient approximation for calculating electronic properties. In this report we concluded that InxGa1-xN ba...
متن کاملو چاه کوانتومی چندتائی InxGa1-xN بررسی مدهای اپتیکی آلیاژ در ناحیه فروسرخ دور In0.5Ga0.5N/GaN
Optical properties of InxGa1-xN alloy and In0.5Ga0.5N/GaN multi quantum wells have been investigated in the region of far infrared. Far-IR reflectivity spectra of In0.5Ga0.5N/GaN multi quantum wells on GaAs substrate have been obtained by oblique incidence p- and s-polarization light using effective medium approximation. The spectra and the dielectric functions response give a good informa...
متن کاملField-induced non-equilibrium electron transport in an In0.4Ga0.6N epilayer grown on GaN studied by subpicosecond Raman spectroscopy
Field-induced electron transport in an InxGa1−xN (x ∼= 0.4) sample grown on GaN has been studied by subpicosecond Raman spectroscopy. Non-equilibrium electron distribution and electron drift velocity due to the presence of piezoelectric and spontaneous fields in the InxGa1−xN layer have been directly measured. The experimental results are compared with ensemble Monte Carlo calculations and reas...
متن کاملLocal Strain Relaxation by A-type Dislocation Clusters in InxGa1-xN/GaN Film with Indium Compositions
A photovoltaic thermal hybrid solar cell is being developed for an energy conversion efficiency higher than the Shockley-Queisser limit, consisting of two junctions with different bandgaps operating on top of a thermal collector at 450 C under solar radiation focused by a concentrator. InxGa1-xN thin films are used due to their wide bandgap range and their stability at high temperatures. The ta...
متن کامل